Power LDMOS transistor

Based on Advanced Rugged Technology (ART), this 1600 W LDMOS RF power transistor has been designed to cover a wide range of applications for ISM, broadcast and communications. The unmatched transistor has a frequency range of 1 MHz to 425 MHz. • High breakdown voltage enables class E operation at VDS = 48 V\n• Suitable for VDS = 50 and 55 V\n• Qualified up to a maximum of VDS = 55 V\n• Characterized from 30 V to 55 V for extended power range\n• Easy power control\n• Integrated dual sided ESD protection enables class C operation and comple;

Ampleon

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Power LDMOS transistor

General description Based on Advanced Rugged Technology (ART), this 1600 W LDMOS RF power transistor has been designed to cover a wide range of applications for ISM, broadcast and communications. The unmatched transistor has a frequency range of 1 MHz to 425 MHz. Features and benefits  High

文件：1.68165 Mbytes 页数：18 Pages

Ampleon

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Package：SOT-539AN；包装：托盘 类别：分立半导体产品 晶体管 - FET，MOSFET - 射频 描述：ART1K6FHG/SOT1248/REELDP

Ampleon

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Power LDMOS transistor

General description Based on Advanced Rugged Technology (ART), this 1600 W LDMOS RF power transistor has been designed to cover a wide range of applications for ISM, broadcast and communications. The unmatched transistor has a frequency range of 1 MHz to 425 MHz. Features and benefits  High

文件：1.68165 Mbytes 页数：18 Pages

Ampleon

安谱隆

Power LDMOS transistor

General description Based on Advanced Rugged Technology (ART), this 1600 W LDMOS RF power transistor has been designed to cover a wide range of applications for ISM, broadcast and communications. The unmatched transistor has a frequency range of 1 MHz to 425 MHz. Features and benefits  High

文件：1.68165 Mbytes 页数：18 Pages

Ampleon

安谱隆

(Potentiometers) Wirewound

文件：503.99 Kbytes 页数：3 Pages

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