ART1K6FHG数据手册分立半导体产品的晶体管-FETMOSFET-射频规格书PDF

描述 Description

Based on Advanced Rugged Technology (ART), this 1600 W LDMOS RF power transistor has been designed to cover a wide range of applications for ISM, broadcast and communications. The unmatched transistor has a frequency range of 1 MHz to 425 MHz.

特性 Features

• High breakdown voltage enables class E operation at VDS = 48 V
• Suitable for VDS = 50 and 55 V
• Qualified up to a maximum of VDS = 55 V
• Characterized from 30 V to 55 V for extended power range
• Easy power control
• Integrated dual sided ESD protection enables class C operation and complete switch off of the transistor
• Excellent ruggedness with no device degradation
• High efficiency
• Excellent thermal stability
• Designed for broadband operation
• For RoHS compliance see the product details on the Ampleon website

应用 Application

• Industrial, scientific and medical applications
• Plasma generators
• MRI systems
• CO2 lasers
• Particle accelerators

简介

ART1K6FHG属于分立半导体产品的晶体管-FETMOSFET-射频。由制造生产的ART1K6FHG晶体管 - FET，MOSFET - 射频射频晶体管、FET 和 MOSFET 是具有三个端子的半导体器件，器件中电流受电场控制。该系列器件用于涉及射频的设备。用于放大或切换信号或功率的晶体管类型包括：E-pHEMT、LDMOS、MESFET、N 沟道、P 沟道、pHEMT、碳化硅、2 N 沟道和 4 N 沟道。