FAST RECOVERY DIODE

FAST RECOVERY DIODE Repetitive voltage up to 4500 V Mean forward current 730 A Surge current 10 kA

文件：45.17 Kbytes 页数：4 Pages

POSEICO

N-CHANNEL ENHANCEMENT MODE

The ARF463A and ARF463B comprise a symmetric pair of common source RF power transistors designed for push pull scientific, commercial, medical and industrial RF power amplifier applications up to 100 MHz. They have been optimized for both linear and high efficiency classes of operation. • Spe

文件：68.68 Kbytes 页数：4 Pages

ADPOW

N-CHANNEL ENHANCEMENT MODE POWER MOSFETs

The ARF463AP1 and ARF463BP1 comprise a symmetric pair of common source RF power transistors designed for push pull scientific, commercial, medical and industrial RF power amplifier applications up to 100MHz. They have been optimized for both linear and high efficiency classes of operation. •S

文件：187.65 Kbytes 页数：4 Pages

ADPOW

N-CHANNEL ENHANCEMENT MODE POWER MOSFETs

The ARF463AP1 and ARF463BP1 comprise a symmetric pair of common source RF power transistors designed for push pull scientific, commercial, medical and industrial RF power amplifier applications up to 100MHz. They have been optimized for both linear and high efficiency classes of operation. •S

文件：187.65 Kbytes 页数：4 Pages

ADPOW

N-CHANNEL ENHANCEMENT MODE

The ARF463A and ARF463B comprise a symmetric pair of common source RF power transistors designed for push pull scientific, commercial, medical and industrial RF power amplifier applications up to 100 MHz. They have been optimized for both linear and high efficiency classes of operation. • Spe

文件：68.68 Kbytes 页数：4 Pages

ADPOW

N-CHANNEL ENHANCEMENT MODE POWER MOSFETs

The ARF463AP1 and ARF463BP1 comprise a symmetric pair of common source RF power transistors designed for push pull scientific, commercial, medical and industrial RF power amplifier applications up to 100MHz. They have been optimized for both linear and high efficiency classes of operation. •S

文件：187.65 Kbytes 页数：4 Pages

ADPOW

N-CHANNEL ENHANCEMENT MODE POWER MOSFETs

The ARF463AP1 and ARF463BP1 comprise a symmetric pair of common source RF power transistors designed for push pull scientific, commercial, medical and industrial RF power amplifier applications up to 100MHz. They have been optimized for both linear and high efficiency classes of operation. •S

文件：187.65 Kbytes 页数：4 Pages

ADPOW

FAST RECOVERY DIODE

FAST RECOVERY DIODE Repetitive voltage up to 4500 V Mean forward current 730 A Surge current 10 kA

文件：45.17 Kbytes 页数：4 Pages

POSEICO

RF VDMOS Power Devices

Microchip

微芯科技

N-CHANNEL ENHANCEMENT MODE

APT

晶科电子