N-CHANNEL ENHANCEMENT MODE

The ARF463A and ARF463B comprise a symmetric pair of common source RF power transistors designed for push pull scientific, commercial, medical and industrial RF power amplifier applications up to 100 MHz. They have been optimized for both linear and high efficiency classes of operation. • Spe

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N-CHANNEL ENHANCEMENT MODE POWER MOSFETs

The ARF463AP1 and ARF463BP1 comprise a symmetric pair of common source RF power transistors designed for push pull scientific, commercial, medical and industrial RF power amplifier applications up to 100MHz. They have been optimized for both linear and high efficiency classes of operation. •S

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N-CHANNEL ENHANCEMENT MODE POWER MOSFETs

The ARF463AP1 and ARF463BP1 comprise a symmetric pair of common source RF power transistors designed for push pull scientific, commercial, medical and industrial RF power amplifier applications up to 100MHz. They have been optimized for both linear and high efficiency classes of operation. •S

文件：187.65 Kbytes 页数：4 Pages

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RF VDMOS Power Devices

Microchip

微芯科技

RF VDMOS Power Devices

Microchip

微芯科技

Package：TO-247-3；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 晶体管 - FET，MOSFET - 射频 描述：RF PWR MOSFET 500V 9A TO-247

MICROCHIP

微芯科技

Package：TO-247-3；包装：托盘 类别：分立半导体产品 晶体管 - FET，MOSFET - 射频 描述：RF PWR MOSFET 500V 9A TO-247

MICROCHIP

微芯科技