Normally closed DIP4-pin economic type with reinforced insulation Modem

FEATURES 1. High cost-performance type of PhotoMOS 1 Form B output 2. Low on-resistance This has been realized thanks to the built-in MOSFET processed by our proprietary method, DSD (Double diffused and Selective Doping) method. 3. Reinforced insulation of 5,000 V More t

文件：81.93 Kbytes 页数：3 Pages

PANASONIC

松下

GU (General Use)-E Type 1-Channel (Form B) 4-pin Type

FEATURES 1. Low on resistance for normally closed type This has been realized thanks to the built in MOSFET processed by our proprietary method, DSD (Double-diffused and Selective Doping) method. Cross section of the normally-closed type of power MOS 2. Reinforced insulation 5,000 V ty

文件：49.7 Kbytes 页数：3 Pages

NAIS

松下电器

GU (General Use)-E Type 1-Channel (Form B) 4-pin Type

FEATURES 1. Low on resistance for normally closed type This has been realized thanks to the built in MOSFET processed by our proprietary method, DSD (Double-diffused and Selective Doping) method. Cross section of the normally-closed type of power MOS 2. Reinforced insulation 5,000 V ty

文件：49.7 Kbytes 页数：3 Pages

NAIS

松下电器

Normally closed DIP4-pin economic type with reinforced insulation Modem

FEATURES 1. High cost-performance type of PhotoMOS 1 Form B output 2. Low on-resistance This has been realized thanks to the built-in MOSFET processed by our proprietary method, DSD (Double diffused and Selective Doping) method. 3. Reinforced insulation of 5,000 V More t

文件：81.93 Kbytes 页数：3 Pages

PANASONIC

松下

Normally closed DIP4-pin economic type with reinforced insulation Modem

FEATURES 1. High cost-performance type of PhotoMOS 1 Form B output 2. Low on-resistance This has been realized thanks to the built-in MOSFET processed by our proprietary method, DSD (Double diffused and Selective Doping) method. 3. Reinforced insulation of 5,000 V More t

文件：81.93 Kbytes 页数：3 Pages

PANASONIC

松下

GU (General Use)-E Type 1-Channel (Form B) 4-pin Type

FEATURES 1. Low on resistance for normally closed type This has been realized thanks to the built in MOSFET processed by our proprietary method, DSD (Double-diffused and Selective Doping) method. Cross section of the normally-closed type of power MOS 2. Reinforced insulation 5,000 V ty

文件：49.7 Kbytes 页数：3 Pages

NAIS

松下电器

Normally closed DIP4-pin economic type with reinforced insulation Modem

FEATURES 1. High cost-performance type of PhotoMOS 1 Form B output 2. Low on-resistance This has been realized thanks to the built-in MOSFET processed by our proprietary method, DSD (Double diffused and Selective Doping) method. 3. Reinforced insulation of 5,000 V More t

文件：81.93 Kbytes 页数：3 Pages

PANASONIC

松下

Normally closed DIP4-pin economic type with reinforced insulation Modem

FEATURES 1. High cost-performance type of PhotoMOS 1 Form B output 2. Low on-resistance This has been realized thanks to the built-in MOSFET processed by our proprietary method, DSD (Double diffused and Selective Doping) method. 3. Reinforced insulation of 5,000 V More t

文件：81.93 Kbytes 页数：3 Pages

PANASONIC

松下

Normally closed DIP4-pin economic type with reinforced insulation Modem

FEATURES 1. High cost-performance type of PhotoMOS 1 Form B output 2. Low on-resistance This has been realized thanks to the built-in MOSFET processed by our proprietary method, DSD (Double diffused and Selective Doping) method. 3. Reinforced insulation of 5,000 V More t

文件：81.93 Kbytes 页数：3 Pages

PANASONIC

松下

Normally closed DIP4-pin economic type with reinforced insulation Modem

FEATURES 1. High cost-performance type of PhotoMOS 1 Form B output 2. Low on-resistance This has been realized thanks to the built-in MOSFET processed by our proprietary method, DSD (Double diffused and Selective Doping) method. 3. Reinforced insulation of 5,000 V More t

文件：81.93 Kbytes 页数：3 Pages

PANASONIC

松下