HE (High-function Economy) Type 1- Channel (Form B) Type

HE (High-function Economy) Type 1- Channel (Form B) Type FEATURES 1. Form B (Normally-closed) type Has been realized thanks to the built-in MOSFET processed by our proprietary method, DSD (Double-diffused and Selective Doping) method. 2. Controls low-level analog signals PhotoMOS rel

文件：56.83 Kbytes 页数：3 Pages

NAIS

松下电器

PhotoMOS HE 1b

FEATURES\n1. Form B (Normally-closed) type\n   Has been realized thanks to the built-in\n   MOSFET processed by our proprietary\n   method, DSD (Double-diffused and\n   Selective Doping) method.\n2. Controls low-level analog signals\n   PhotoMOS relays feature extremely low\n   closed-circuit offset 1. Form B (Normally-closed) type\n   Has been realized thanks to the built-in\n   MOSFET processed by our proprietary\n   method, DSD (Double-diffused and\n   Selective Doping) method.\n2. Controls low-level analog signals\n   PhotoMOS relays feature extremely low\n   closed-circuit offset voltage t;

Panasonic

松下

Package：6-DIP（0.300"，7.62mm）；包装：散装 类别：继电器 固态继电器 描述：SSR RELAY DPST-NC 200MA 0-250V

Panasonic Electric Works

Package：6-DIP（0.300"，7.62mm）；包装：散装 类别：继电器 固态继电器 描述：SSR RELAY DPST-NC 200MA 0-250V

Panasonic Electric Works

HE (High-function Economy) Type 1- Channel (Form B) Type

HE (High-function Economy) Type 1- Channel (Form B) Type FEATURES 1. Form B (Normally-closed) type Has been realized thanks to the built-in MOSFET processed by our proprietary method, DSD (Double-diffused and Selective Doping) method. 2. Controls low-level analog signals PhotoMOS rel

文件：56.83 Kbytes 页数：3 Pages

NAIS

松下电器

HE (High-function Economy) Type 1- Channel (Form B) Type

HE (High-function Economy) Type 1- Channel (Form B) Type FEATURES 1. Form B (Normally-closed) type Has been realized thanks to the built-in MOSFET processed by our proprietary method, DSD (Double-diffused and Selective Doping) method. 2. Controls low-level analog signals PhotoMOS rel

文件：56.83 Kbytes 页数：3 Pages

NAIS

松下电器

HE (High-function Economy) Type 1- Channel (Form B) Type

HE (High-function Economy) Type 1- Channel (Form B) Type FEATURES 1. Form B (Normally-closed) type Has been realized thanks to the built-in MOSFET processed by our proprietary method, DSD (Double-diffused and Selective Doping) method. 2. Controls low-level analog signals PhotoMOS rel

文件：56.83 Kbytes 页数：3 Pages

NAIS

松下电器

PhotoMOS HE 1b

Panasonic

松下

PhotoMOS HE 1b

Panasonic

松下

Package：6-SMD（0.300"，7.62mm）；包装：管件 类别：继电器 固态继电器 描述：SSR RELAY DPST-NC 200MA 0-250V

Panasonic Electric Works