AQV453数据手册继电器的固态继电器规格书PDF

描述 Description

FEATURES
1. Form B (Normally-closed) type
   Has been realized thanks to the built-in
   MOSFET processed by our proprietary
   method, DSD (Double-diffused and
   Selective Doping) method.
2. Controls low-level analog signals
   PhotoMOS relays feature extremely low
   closed-circuit offset voltage to enable
   control of low-level analog signals without
   distortion.
3. High sensitivity, low ON resistance
   Can control a maximum 0.15 A load
   current with a 5 mA input current. Low
   ON resistance of 16 Ω (AQV454). Stable
   operation because there are no metallic
   contact parts.
4. Controls various types of load such as relays, motors, lamps and solenoids.
5. Eliminates the need for a power supply to drive the power MOSFET
   A power supply used to drive the power
   MOSFET is unnecessary because of the
   built-in optoelectronic device. This results
   in easy circuit design and small PC board
   area.
6. Low thermal electromotive force (Approx. 1 µV) (Basic insulation)
7. Reinforced insulation 5,000 V type also available.
   More than 0.4 mm .016 inch internal
   insulation distance between inputs and
   outputs. Conforms to IEC950 (reinforced
   insulation).TYPICAL APPLICATIONS
• Security equipment
• High-speed inspection machines
• Measuring instruments
• Telephone equipment
• Sensors

特性 Features

1. Form B (Normally-closed) type
   Has been realized thanks to the built-in
   MOSFET processed by our proprietary
   method, DSD (Double-diffused and
   Selective Doping) method.
2. Controls low-level analog signals
   PhotoMOS relays feature extremely low
   closed-circuit offset voltage to enable
   control of low-level analog signals without
   distortion.
3. High sensitivity, low ON resistance
   Can control a maximum 0.15 A load
   current with a 5 mA input current. Low
   ON resistance of 16 Ω (AQV454). Stable
   operation because there are no metallic
   contact parts.
4. Controls various types of load such as relays, motors, lamps and solenoids.
5. Eliminates the need for a power supply to drive the power MOSFET
   A power supply used to drive the power
   MOSFET is unnecessary because of the
   built-in optoelectronic device. This results
   in easy circuit design and small PC board
   area.
6. Low thermal electromotive force (Approx. 1 µV) (Basic insulation)
7. Reinforced insulation 5,000 V type also available.
   More than 0.4 mm .016 inch internal
   insulation distance between inputs and
   outputs. Conforms to IEC950 (reinforced
   insulation).TYPICAL

应用 Application

• Security equipment
• High-speed inspection machines
• Measuring instruments
• Telephone equipment
• Sensors