首页 >APX9140DEE-PB>规格书列表
零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
---|---|---|---|---|
P-CHANNELPOWERMOSFETS FEATURES •LowRDS(on) •Improvedinductiveruggedness •Fsatswitchingtimes •Ruggedpolysilicongatecellstructure •Lowinputcapacitance •Extendedsafeoperatingarea •Improvedhightemperaturereliability | SamsungSamsung semiconductor 三星三星半导体 | Samsung | ||
-19A,-100V,0.200Ohm,P-ChannelPowerMOSFET -19A,-100V,0.200Ohm,P-ChannelPowerMOSFET TheseareP-Channelenhancementmodesilicongatepowerfieldeffecttransistors.TheyareadvancedpowerMOSFETsdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.Allofthesepow | Intersil Intersil Corporation | Intersil | ||
SimpleDriveRequirements | IRF International Rectifier | IRF | ||
iscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
iscP-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=-18A@TC=25℃ ·DrainSourceVoltage-VDSS=-100V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.2Ω(Max)@VGS=-10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive. | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
POWERMOSFETTHRU-HOLE(TO-254AA) HEXFET®MOSFETtechnologyisthekeytoInternationalRectifier’sadvancedlineofpowerMOSFETtransistors.Theefficientgeometrydesignachievesverylowon-stateresistancecombinedwithhightransconductance.HEXFETtransistorsalsofeatureallofthewell-establishedadvantagesofMOSFETs,s | IRF International Rectifier | IRF | ||
SimpleDriveRequirements | IRF International Rectifier | IRF | ||
POWERMOSFETSURFACEMOUNT(SMD-1) HEXFET®MOSFETtechnologyisthekeytoInternationalRectifier’sadvancedlineofpowerMOSFETtransistors.Theefficientgeometrydesignachievesverylowon-stateresistancecombinedwithhightransconductance.HEXFETtransistorsalsofeatureallofthewell-establishedadvantagesofMOSFETs,s | IRF International Rectifier | IRF | ||
POWERMOSFETN-CHANNEL(BVdss=-100V,Rds(on)=0.20ohm,Id=-18A) HEXFET®MOSFETtechnologyisthekeytoInternationalRectifier’sadvancedlineofpowerMOSFETtransistors.Theefficientgeometrydesignachievesverylowon-stateresistancecombinedwithhightransconductance.HEXFETtransistorsalsofeatureallofthewell-establishedadvantagesofMOSFETs,s | IRF International Rectifier | IRF | ||
SimpleDriveRequirements | IRF International Rectifier | IRF |
详细参数
- 型号:
APX9140DEE-PB
- 制造商:
ANPEC
- 制造商全称:
Anpec Electronics Coropration
- 功能描述:
Hall Effect Sensor IC
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
ANPEC |
23+ |
原厂原包 |
19960 |
只做进口原装 终端工厂免费送样 |
询价 | ||
ANPEC |
13+ |
9718 |
原装分销 |
询价 | |||
KODENSHI原装 |
25+23+ |
DIP |
25787 |
绝对原装正品全新进口深圳现货 |
询价 | ||
KODENSHI |
24+ |
DIP |
880000 |
明嘉莱只做原装正品现货 |
询价 | ||
ANPEC |
2406+ |
8460 |
优势代理渠道 原装现货 可全系列订货 |
询价 | |||
KODENSHI |
25+ |
DIP |
64581 |
百分百原装现货 实单必成 欢迎询价 |
询价 | ||
茂达 |
23+ |
TO-92M4 |
15000 |
原厂授权代理,海外优势订货渠道。可提供大量库存,详 |
询价 | ||
茂达 |
23+24 |
TO-92M4 |
16790 |
专业经营各种场效应管、三极管、IGBT、可控硅、稳压IC |
询价 | ||
茂达 |
24+ |
DIP-4 |
1000 |
询价 | |||
ANPEC(茂达电子) |
23+ |
NA |
20094 |
正纳10年以上分销经验原装进口正品做服务做口碑有支持 |
询价 |
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