POWER MOS V

Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. • Fast Recovery

文件：67.37 Kbytes 页数：4 Pages

MICROSEMI

美高森美

Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. • Fast Recovery

文件：62.59 Kbytes 页数：4 Pages

ADPOW

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID= 27A@ TC=25℃ ·Drain Source Voltage- : VDSS= 800V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.3Ω(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC co

文件：328.38 Kbytes 页数：2 Pages

ISC

无锡固电

Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

文件：63.46 Kbytes 页数：4 Pages

ADPOW

POWER MOS V

Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. • Fast Recovery

文件：67.37 Kbytes 页数：4 Pages

MICROSEMI

美高森美

Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

文件：63.46 Kbytes 页数：4 Pages

ADPOW

POWER MOS V

Microchip

微芯科技

FREDFETs

Microchip

微芯科技