Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

POWER MOS V® Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. • Fast

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MICROSEMI

美高森美

Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

POWER MOS V® Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. • Fast

文件：71.39 Kbytes 页数：4 Pages

ADPOW

Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

Microchip

微芯科技

Low Capacitance Transient Voltage Suppressor Array

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ONSEMI

安森美半导体

2.5 GHz sigma delta fractional-N / 760 MHz IF integer frequency synthesizers

GENERAL DESCRIPTION The SA8028 BICMOS device integrates programmable dividers, charge pumps and phase comparators to implement phase–locked loops. The device is designed to operate from 3 NiCd cells, in pocket phones, with low current and nominal 3 V supplies. FEATURES • Extremely low phase no

文件：278.72 Kbytes 页数：28 Pages

PHI

PHI

DUTY CONTROLLER

文件：190 Kbytes 页数：6 Pages

TOSHIBA

东芝