isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 57A@ TC=25℃ ·Drain Source Voltage : VDSS= 400V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.07Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-

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无锡固电

POWER MOS V FREDFET

POWER MOS V® FREDFET Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layo

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Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

POWER MOS V® Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. • Fast

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isc N-Channel MOSFET Transistor

DESCRIPTION ·Drain Current :ID= 57A@ TC=25℃ ·Drain Source Voltage : VDSS= 400V(Min) ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·high voltage, high speed power switching

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无锡固电

POWER MOS V FREDFET

文件：190.47 Kbytes 页数：4 Pages

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POWER MOS V FREDFET

文件：190.47 Kbytes 页数：4 Pages

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POWER MOS V FREDFET

文件：190.47 Kbytes 页数：4 Pages

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POWER MOS V FREDFET

文件：190.47 Kbytes 页数：4 Pages

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Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

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MOSFET N-CH 400V 53A SOT-227

Microchip

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