NPN TRANSISTOR

Diodes

美台半导体

丝印：APT13005DTF-G1；Package：ITO220AB；450V NPN HIGH VOLTAGE POWER TRANSISTOR

Features BVCEO > 450V BVCES > 700V BVEBO > 9V IC = 4A High Collector Current Integrated Anti-Parallel Diode to act as free-wheeling diode Anti-Saturation feature Lead-Free Finish; RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) For automotive applications r

文件：558.57 Kbytes 页数：7 Pages

DIODES

美台半导体

Package：TO-220-3 整包；包装：散装 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS NPN 450V 4A TO220F-3

DIODES

美台半导体

HIGH VOLTAGE FAST SWITCHING NPN POWER TRANSISTOR

General Description The APT13005S is a high voltage, high speed, high efficiency switching transistor, and it is specially designed for off-line switch mode power supplies with low output power. The APT13005S is available in TO-220F-3, TO-126 and TO-251 packages. Features • High Switching Spee

文件：667.8 Kbytes 页数：10 Pages

BCDSEMI

新进半导体

isc Silicon NPN Power Transistor

DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 450V(Min.) ·High Reliability ·Low Collector Saturation Voltage ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·High ruggedness electronic ignitions ·High voltage ignition coil

文件：303.63 Kbytes 页数：2 Pages

ISC

无锡固电

TO-220 NPN SILICON POWER TRANSISTOR

TRANSISTOR（NPN） FEATURES Power dissipation PCM : 1.5 W（Tamb=25℃） Collector current ICM : 4.0 A Collector-base voltage V(BR)CBO : 700 V Operating and storage junction temperature range TJ，Tstg: -55℃ to +150℃

文件：149.33 Kbytes 页数：2 Pages

AVICTEK