N-Channel Enhancement Mode MOSFET

Features • 30V/3A, RDS(ON)=31mΩ(typ.) @ VGS=10V RDS(ON)=35mΩ(typ.) @ VGS=4.5V RDS(ON)=55mΩ(typ.) @ VGS=2.5V • Super High Dense Cell Design • Reliable and Rugged • Lead Free Available (RoHS Compliant) Applications • Switching Regulators • Switching Converters

文件：114.75 Kbytes 页数：10 Pages

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N-Channel Enhancement Mode MOSFET

Features • 30V/3A, RDS(ON)=31mΩ(typ.) @ VGS=10V RDS(ON)=35mΩ(typ.) @ VGS=4.5V RDS(ON)=55mΩ(typ.) @ VGS=2.5V • Super High Dense Cell Design • Reliable and Rugged • Lead Free Available (RoHS Compliant) Applications • Switching Regulators • Switching Converters

文件：114.75 Kbytes 页数：10 Pages

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N-Channel 30-V (D-S) MOSFET

文件：1.01078 Mbytes 页数：8 Pages

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30 V, N-channel enhancement mode MOSFET

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