N-Channel Enhancement Mode MOSFET

N-Channel Enhancement Mode MOSFET Features • 30V/15A, RDS(ON)=48mΩ(typ.) @ VGS =10V RDS(ON)=75mΩ(typ.) @ VGS=4.5V •Super High Dense Cell Design •High Power and Current Handling Capability •TO-252 and SOT-223 Package Applications • Switching Regulators

文件：213.49 Kbytes 页数：12 Pages

ANPEC

茂达电子

N-Channel Enhancement Mode MOSFET

N-Channel Enhancement Mode MOSFET Features • 30V/15A, RDS(ON)=48mΩ(typ.) @ VGS =10V RDS(ON)=75mΩ(typ.) @ VGS=4.5V •Super High Dense Cell Design •High Power and Current Handling Capability •TO-252 and SOT-223 Package Applications • Switching Regulators

文件：213.49 Kbytes 页数：12 Pages

ANPEC

茂达电子

RF AMPLIFIER MODEL

文件：40.71 Kbytes 页数：1 Pages

APITECH

Dual Independent Differential Amp for Low Power Applications from DC to 120MHz

The CA3054 consists of two independent differential amplifiers with associated constant current transistors on a common monolithic substrate. The six NPN transistors which comprise the amplifiers are general purpose devices which exhibit low 1/f noise and a value of fT in excess of 300MHz. These f

文件：208.84 Kbytes 页数：8 Pages

INTERSIL

Dual Independent Differential Amp for Low Power Applications from DC to 120MHz

文件：466.21 Kbytes 页数：8 Pages

RENESAS

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