N-Channel Enhancement Mode MOSFET

Features • 30V/70A , RDS(ON)=7mΩ(typ.)@ VGS=10V RDS(ON)=11mΩ(typ.) @ VGS=4.5V • Super High Dense Advanced Cell Design for Extremely Low RDS(ON) • Reliable and Rugged • TO-220 , TO-252 and TO-263 Packages

文件：716.55 Kbytes 页数：12 Pages

ANPEC

茂达电子

N-Channel Enhancement Mode MOSFET

Features • 30V/70A , RDS(ON)=7mΩ(typ.)@ VGS=10V RDS(ON)=11mΩ(typ.) @ VGS=4.5V • Super High Dense Advanced Cell Design for Extremely Low RDS(ON) • Reliable and Rugged • TO-220 , TO-252 and TO-263 Packages

文件：716.55 Kbytes 页数：12 Pages

ANPEC

茂达电子

N-Channel Enhancement Mode MOSFET

Features • 30V/70A , RDS(ON)=7mΩ(typ.)@ VGS=10V RDS(ON)=11mΩ(typ.) @ VGS=4.5V • Super High Dense Advanced Cell Design for Extremely Low RDS(ON) • Reliable and Rugged • TO-220 , TO-252 and TO-263 Packages

文件：716.55 Kbytes 页数：12 Pages

ANPEC

茂达电子

N-Channel Enhancement Mode MOSFET

Features • 30V/70A , RDS(ON)=7mΩ(typ.)@ VGS=10V RDS(ON)=11mΩ(typ.) @ VGS=4.5V • Super High Dense Advanced Cell Design for Extremely Low RDS(ON) • Reliable and Rugged • TO-220 , TO-252 and TO-263 Packages

文件：716.55 Kbytes 页数：12 Pages

ANPEC

茂达电子