N-Channel Enhancement Mode MOSFET

Features • 30V/60A , RDS(ON)=9mΩ(typ.) @ VGS=10V RDS(ON)=14mΩ(typ.) @ VGS=5V • Super High Dense Cell Design for Extremely Low RDS(ON) • Reliable and Rugged • TO-220, TO-252 and TO-263 Packages Applications • Power Management in Desktop Computer or DC/DC Converters Systems.

文件：606.19 Kbytes 页数：11 Pages

ANPEC

茂达电子

N-Channel Enhancement Mode MOSFET

Features • 30V/60A , RDS(ON)=9mΩ(typ.) @ VGS=10V RDS(ON)=14mΩ(typ.) @ VGS=5V • Super High Dense Cell Design for Extremely Low RDS(ON) • Reliable and Rugged • TO-220, TO-252 and TO-263 Packages Applications • Power Management in Desktop Computer or DC/DC Converters Systems.

文件：606.19 Kbytes 页数：11 Pages

ANPEC

茂达电子

N-Channel Enhancement Mode MOSFET

Features • 30V/60A , RDS(ON)=9mΩ(typ.) @ VGS=10V RDS(ON)=14mΩ(typ.) @ VGS=5V • Super High Dense Cell Design for Extremely Low RDS(ON) • Reliable and Rugged • TO-220, TO-252 and TO-263 Packages Applications • Power Management in Desktop Computer or DC/DC Converters Systems.

文件：606.19 Kbytes 页数：11 Pages

ANPEC

茂达电子

N-Channel Enhancement Mode MOSFET

Features • 30V/60A , RDS(ON)=9mΩ(typ.) @ VGS=10V RDS(ON)=14mΩ(typ.) @ VGS=5V • Super High Dense Cell Design for Extremely Low RDS(ON) • Reliable and Rugged • TO-220, TO-252 and TO-263 Packages Applications • Power Management in Desktop Computer or DC/DC Converters Systems.

文件：606.19 Kbytes 页数：11 Pages

ANPEC

茂达电子