EMH2314

General-PurposeSwitchingDeviceApplications

Features •ON-resistanceRDS(on)1=28mΩ(typ.) •1.8Vdrive •Halogenfreecompliance •ProtectionDiodein

EMH2314-TL-H

DualP-ChannelPowerMOSFET

Features •ON-resistanceRDS(on)1=28mΩ(typ.) •Halogenfreecompliance •1.8Vdrive •ProtectionDiodein

EMS2314

MACHINEPINSOCKET

ET2314

4-ChannelInputAudioProcessor

Features *CMOSTechnolog *LeastExternalComponents *TrebleandBassControl *LoudnessFunction *4StereoInputswithSelectableInputGain *Input/OutputforExternalNoiseReductionSystem/Equalizer *2IndependentSpeakerControlsforBalanceControl *IndependentMuteFunction *

FCS2314AK

SPECIFICATIONSFORLIQUIDCRYSTALDISPLAY

MECHANICALSPECS 1.OverallModuleSize(W*H*T)41.2*47.5*2.1(MAX)mm 2.ViewingArea(W*H)38.2X17.0mm 3.DotSize0.34*0.50 4.DotPitch0.38*0.58 5.DrivingMethod1/17D,1/5B,4.8V 6.ControllerICST7032I 7.LCDTypeSTN(GRAY),Positive,Reflective 8.ViewingDirection6O’Clock 9.In

FTC2314

TRANSISTOR(NPN)

TRANSISTOR(NPN) FEATURES ●TransceiverDriverApplications

FTK2314S

20VN-ChannelMOSFETs

G2314

N-CHANNELENHANCEMENTMODEPOWERMOSFET

Description TheG2314utilizedadvancedprocessingtechniquestoachievethelowestpossibleon-resistance,extremelyefficientandcost-effectivenessdevice. TheG2314isuniversallyusedforallcommercial-industrialapplications. Features *Capableof2.5Vgatedrive *Lowon-resistance

G2314

N-CHANNELENHANCEMENTMODEPOWERMOSFET

G2314

Break-AwayBumpers