APM2301AAC-TUL

P-Channel Enhancement Mode MOSFET

Features •-20V/-3A, RDS(ON)=72mΩ(typ.)@VGS=-4.5V RDS(ON)=98mΩ(typ.)@VGS=-2.5V •SuperHighDenseCellDesign •ReliableandRugged •LeadFreeAvailable(RoHSCompliant) Applications •PowerManagementinNotebookComputer,PortableEquipmentandBatteryPowe

APM2301AC-TR

P-Channel Enhancement Mode MOSFET

Features •-20V/-2.8A,RDS(ON)=72mΩ(typ.)@VGS=-10VRDS(ON)=100mΩ(typ.)@VGS=-4.5V •SuperHighDenseCellDesignforExtremelyLowRDS(ON) •ReliableandRugged •SOT-23Package Applications •PowerManagementinNotebookComputer,PortableEquipmentandBatteryPoweredSystems.

APM2301CA

P-Channel Enhancement Mode MOSFET

Features ·-20V/-2.8A RDS(ON)=56mW(typ.)@VGS=-4.5V RDS(ON)=85mW(typ.)@VGS=-2.5V RDS(ON)=106mW(typ.)@VGS=-1.8V ·SuperHighDenseCellDesign ·ReliableandRugged Applications ·PowerManagementinNotebookComputer,PortableEquipmentandBattery

APM2301CAC-TP

P-Channel Mosfet

Application Load/PowerSwitching InterfacingSwitching LogicLevelShift

APM2301CAC-TR

P-Channel Enhancement Mode MOSFET

Features ·-20V/-2.8A RDS(ON)=56mW(typ.)@VGS=-4.5V RDS(ON)=85mW(typ.)@VGS=-2.5V RDS(ON)=106mW(typ.)@VGS=-1.8V ·SuperHighDenseCellDesign ·ReliableandRugged Applications ·PowerManagementinNotebookComputer,PortableEquipmentandBattery

APM2301CAC-TRL

P-Channel Enhancement Mode MOSFET

Features ·-20V/-2.8A RDS(ON)=56mW(typ.)@VGS=-4.5V RDS(ON)=85mW(typ.)@VGS=-2.5V RDS(ON)=106mW(typ.)@VGS=-1.8V ·SuperHighDenseCellDesign ·ReliableandRugged Applications ·PowerManagementinNotebookComputer,PortableEquipmentandBattery

APM2305

P-Channel Enhancement Mode MOSFET

Features •-16V/-3.5A,RDS(ON)=60mΩ(typ.)@VGS=-4.5V RDS(ON)=70mΩ(typ.)@VGS=-2.5V RDS(ON)=83mΩ(typ.)@VGS=-1.8V •SuperHighDenseCellDesignforExtremelyLowRDS(ON) •ReliableandRugged •SOT-23Package Applications •PowerM

APM2305A

P-Channel Enhancement Mode MOSFET

Features •-16V/-3.5A,RDS(ON)=60mΩ(typ.)@VGS=-4.5V RDS(ON)=70mΩ(typ.)@VGS=-2.5V RDS(ON)=83mΩ(typ.)@VGS=-1.8V •SuperHighDenseCellDesignforExtremelyLowRDS(ON) •ReliableandRugged •SOT-23Package Applications •PowerM

APM2305AC-TR

P-Channel Enhancement Mode MOSFET

Features •-16V/-3.5A,RDS(ON)=60mΩ(typ.)@VGS=-4.5V RDS(ON)=70mΩ(typ.)@VGS=-2.5V RDS(ON)=83mΩ(typ.)@VGS=-1.8V •SuperHighDenseCellDesignforExtremelyLowRDS(ON) •ReliableandRugged •SOT-23Package Applications •PowerM

APM2306

N-Channel Enhancement Mode MOSFET

Features •30V/3.5A, RDS(ON)=70mΩ(typ.)@VGS=5V RDS(ON)=42mΩ(typ.)@VGS=10V •SuperHighDenseCellDesign •HighPowerandCurrentHandlingCapability •SOT-23Package Applications •SwitchingRegulators •SwitchingConverters