丝印：APM；Package：3LdSOT-23；Precision Low Power FGA Voltage References

The ISL60002 FGA voltage references are very high precision analog voltage references fabricated using the Renesas proprietary Floating Gate Analog (FGA) technology and feature low supply voltage operation at ultra-low 350nA operating current. Features • Reference voltages . . . . . 1.024V, 1.2V

文件：2.35923 Mbytes 页数：40 Pages

RENESAS

瑞萨

丝印：APM；Package：TSOT23-6；High Efficiency, 2A, 16V, 500kHz Synchronous, Step-Down Converter

文件：418.9 Kbytes 页数：18 Pages

MPS

美国芯源

丝印：APM4953；Package：SOP-8；-30V P-Channel MOSFET

Features VDS (V) = -30V ID = -5.3A (VGS = 10V) RDS(ON)

文件：534.15 Kbytes 页数：6 Pages

UMWGuangdong Youtai Semiconductor Co., Ltd.

友台半导体广东友台半导体有限公司

丝印：APM4953；Package：SOP-8；-30V P-Channel MOSFET

Features VDS (V) = -30V ID = -5.3A (VGS = 10V) RDS(ON)

文件：538.74 Kbytes 页数：6 Pages

EVVOSEMI

翊欧

丝印：APM9988；Package：DFN25；Dual N-Channel Enhancement Mode MOSFET

文件：578.42 Kbytes 页数：12 Pages

FS

P-Channel Enhancement Mode MOSFET

 Features • -20V/-0.65A , RDS(ON)=370mΩ(typ.) @ VGS=-4.5V RDS(ON)=550mΩ(typ.) @ VGS=-2.5V •Super High Dense Cell Design •Reliable and Rugged •SC-70 Package •Lead Free Available (RoHS Compliant)

文件：112.94 Kbytes 页数：10 Pages

ANPEC

茂达电子

P-Channel Enhancement Mode MOSFET

 Features • -20V/-0.65A , RDS(ON)=370mΩ(typ.) @ VGS=-4.5V RDS(ON)=550mΩ(typ.) @ VGS=-2.5V •Super High Dense Cell Design •Reliable and Rugged •SC-70 Package •Lead Free Available (RoHS Compliant)

文件：112.94 Kbytes 页数：10 Pages

ANPEC

茂达电子

P-Channel Enhancement Mode MOSFET

 Features • -20V/-0.65A , RDS(ON)=370mΩ(typ.) @ VGS=-4.5V RDS(ON)=550mΩ(typ.) @ VGS=-2.5V •Super High Dense Cell Design •Reliable and Rugged •SC-70 Package •Lead Free Available (RoHS Compliant)

文件：112.94 Kbytes 页数：10 Pages

ANPEC

茂达电子

N-Channel Enhancement Mode MOSFET

Features • 20V/0.8A , RDS(ON)=190mΩ(typ.) @ VGS=4.5V RDS(ON)=310mΩ(typ.) @ VGS=2.5V •Super High Dense Cell Design •Reliable and Rugged •Lead Free Available (RoHS Compliant)

文件：109.63 Kbytes 页数：10 Pages

ANPEC

茂达电子

N-Channel Enhancement Mode MOSFET

Features • 20V/0.8A , RDS(ON)=190mΩ(typ.) @ VGS=4.5V RDS(ON)=310mΩ(typ.) @ VGS=2.5V •Super High Dense Cell Design •Reliable and Rugged •Lead Free Available (RoHS Compliant)

文件：109.63 Kbytes 页数：10 Pages

ANPEC

茂达电子