APL3555数据表ic资料市场行情茂达电子ANPEC-114ic电子网

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型号	下载订购	功能描述	制造商上传企业	LOGO
APL3555	文件：915.47 Kbytes Page：18 Pages	USB Power-Distribution Switches 文件：915.47 Kbytes 页数：18 Pages	ANPEC 茂达电子	ANPEC
APT3555AN	文件：309.02 Kbytes Page：2 Pages	isc N-Channel MOSFET Transistor FEATURES ·Drain Current : ID= 10.5A@ TC=25℃ ·Drain Source Voltage : VDSS= 350V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.55Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, D 文件：309.02 Kbytes 页数：2 Pages	ISC 无锡固电	ISC
APT3555BN	文件：345.29 Kbytes Page：2 Pages	isc N-Channel MOSFET Transistor DESCRIPTION ·Drain Current :ID= 12A@ TC=25℃ ·Drain Source Voltage : VDSS= 350V(Min) ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·high voltage, high speed power switching 文件：345.29 Kbytes 页数：2 Pages	ISC 无锡固电	ISC
APT3555DN	文件：345.29 Kbytes Page：2 Pages	isc N-Channel MOSFET Transistor DESCRIPTION ·Drain Current :ID= 12A@ TC=25℃ ·Drain Source Voltage : VDSS= 350V(Min) ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·high voltage, high speed power switching 文件：345.29 Kbytes 页数：2 Pages	ISC 无锡固电	ISC

更多APL3555供应商更新时间2025-9-30 15:03:00