650V N-Channel Enhancement Mode MOSFET

APM

永源微

BIDW50N65T Insulated Gate Bipolar Transistor (IGBT)

General Information The Bourns® Model BIDW50N65T IGBT device combines technology from a MOS gate and a bipolar transistor for an optimum component for high voltage and high current applications. This device uses Trench-Gate Field-Stop technology providing greater control of dynamic characteris

文件：1.32999 Mbytes 页数：10 Pages

Bourns

伯恩斯

IGBT

DESCRIPTION · Low Saturation Voltage:VCE(sat)=2.2V@IC=50A · High Current Capability · High Input Impedance APPLICATIONS · Solar Converters · Uninterrupted Power Supply · UPS,PFC · Welding Converters

文件：374.45 Kbytes 页数：4 Pages

ISC

无锡固电

650V/50A Trench Field Stop IGBT

Features  650V 50A,VCE(sat)(typ.) = 1.70 V@50A  Field Stop IGBT Technology.  10μs Short Circuit Capability.  Square RBSOA.  Positive VCE (on) Temperature Coefficient. Benefits  High Efficiency for Motor Control.  Rugged Performance.  Excellent Current Sharing in Parallel Operation

文件：530.17 Kbytes 页数：2 Pages

LUGUANG

鲁光电子