600V N-Channel Enhancement Mode MOSFET

APM

永源微

Power MOSFET

文件：193.74 Kbytes 页数：3 Pages

JIANGSU

长电科技

N-CHANNEL SILICON POWER MOSFETFeatures

文件：580.87 Kbytes 页数：5 Pages

Fuji

富士通

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID=3A@ TC=25℃ ·Drain Source Voltage- : VDSS=600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 2.3Ω(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC conve

文件：332.33 Kbytes 页数：2 Pages

ISC

无锡固电