Simple Drive Requirement, Full Bridge Application on LCD Monitor Inverter

文件：99.35 Kbytes 页数：7 Pages

A-POWER

富鼎先进电子

Simple Drive Requirement

文件：99.35 Kbytes 页数：7 Pages

A-POWER

富鼎先进电子

Simple Drive Requirement, Full Bridge Application on LCD Monitor Inverter

APEC

富鼎先进

Dual Enhancement Mode MOSFET (N-and P-Channel)

Features • N-Channel 20V/15A, RDS(ON)=12mΩ(typ.) @ VGS=10V RDS(ON)=17mΩ(typ.) @ VGS=4.5V • P-Channel -20V/-6A, RDS(ON)=30mΩ(typ.) @ VGS=-4.5V RDS(ON)=45mΩ(typ.) @ VGS=-2.5V • Super High Dense Cell Design for Extremely Low RDS(ON) • Reliable

文件：195.44 Kbytes 页数：13 Pages

ANPEC

茂达电子

Dual Enhancement Mode MOSFET (N-and P-Channel)

Features • N-Channel 20V/15A, RDS(ON)=12mΩ(typ.) @ VGS=10V RDS(ON)=17mΩ(typ.) @ VGS=4.5V • P-Channel -20V/-6A, RDS(ON)=30mΩ(typ.) @ VGS=-4.5V RDS(ON)=45mΩ(typ.) @ VGS=-2.5V • Super High Dense Cell Design for Extremely Low RDS(ON) • Reliable

文件：195.44 Kbytes 页数：13 Pages

ANPEC

茂达电子

Dual Enhancement Mode MOSFET (N-and P-Channel)

Features • N-Channel 20V/9A, RDS(ON) =12mΩ(typ.) @ VGS = 4.5V RDS(ON) =18mΩ(typ.) @ VGS = 2.5V • P-Channel -20V/-6A, RDS(ON) =30mΩ(typ.) @ VGS =-4.5V RDS(ON) =50mΩ(typ.) @ VGS =-2.5V • Super High Dense Cell Design • Reliable and Rugged • Lead Free

文件：150.5 Kbytes 页数：13 Pages

ANPEC

茂达电子