丝印：AP8P06SI；Package：SOT89-3L；-60V P-Channel Enhancement Mode MOSFET

Features - VDS = -60V ID =-8.5A - RDS(ON)

文件：1.65955 Mbytes 页数：7 Pages

APME

永源微电子

8A, 60V, 0.300 Ohm, P-Channel Power MOSFETs

These are P-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching reg

文件：87.69 Kbytes 页数：8 Pages

INTERSIL

8A, 60V, 0.300 Ohm, ESD Rated, Logic Level, P-Channel Power MOSFET

These products are P-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits, gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching regu

文件：102.78 Kbytes 页数：8 Pages

INTERSIL

8A, 60V, 0.300 Ohm, P-Channel Power MOSFETs

These are P-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching reg

文件：87.69 Kbytes 页数：8 Pages

INTERSIL