丝印：1008；Package：SOT23-3L；100V N-Channel Enhancement Mode MOSFET

Features - VDS = 100V ID =8A - RDS(ON)

文件：1.32189 Mbytes 页数：7 Pages

APME

永源微电子

100V N-Channel MOSFET

文件：403.26 Kbytes 页数：8 Pages

PANJIT

強茂

N-CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR

N-CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR ■ TYPICAL RDS(on)= 0.25 Ω ■ AVALANCHE RUGGED TECHNOLOGY ■ 100 AVALANCHE TESTED ■ REPETITIVE AVALANCHE DATA AT 100°C ■ LOW INPUT CAPACITANCE ■ LOW GATE CHARGE ■ HIGH CURRENT CAPABILITY ■ 175°C OPEARTING TEMPERATURE ■ APPLICATION

文件：381.25 Kbytes 页数：9 Pages

STMICROELECTRONICS

意法半导体

Rad-Hard N-channel 100 V, 6 A Power MOSFET

文件：501.26 Kbytes 页数：18 Pages

STMICROELECTRONICS

意法半导体