丝印：AP8H02LI；Package：SOT23-6L；20V NN-Channel Enhancement Mode MOSFET

Features - VDS = 20V ID =8.0A - RDS(ON)

文件：711.72 Kbytes 页数：7 Pages

APME

永源微电子

Dual Low-Dropout Regulator

文件：167.91 Kbytes 页数：8 Pages

TOSHIBA

东芝

TOSHIBA Multi-Chip Transistor Silicon NPN Epitaxial Type, Field Effect Transistor Silicon N Channel MOS Type

STROBE FLASH APPLICATIONS HIGH-SPEED SWITCHING APPLICATIONS DC-DC CONVERTER APPLICATIONS • Multi-chip discrete device; built-in NPN transistor for main switch and N-ch MOS FET for drive • High DC current gain: hFE = 250 to 400 (IC = 0.3 A) (NPN transistor) • Low collector-emitter saturation v

文件：249.35 Kbytes 页数：8 Pages

TOSHIBA

东芝

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

文件：1.58274 Mbytes 页数：73 Pages

TOSHIBA

东芝