丝印：AP6N03BF；Package：DFN2X2-6L；30VN-ChannelEnhancementModeMOSFET

Features - VDS = 30V ID =6.2A - RDS(ON)

文件：762.2 Kbytes 页数：7 Pages

APME

永源微电子

DUAL TMOS POWER MOSFET 30 VOLTS

Medium Power Surface Mount Products TMOS Dual N-Channel Field Effect Transistors Dual HDTMOS devices are an advanced series of power MOSFETs which utilize Motorola’s High Cell Density TMOS process. These miniature surface mount MOSFETs feature low RDS(on) and true logic level performance. Dual H

文件：207.39 Kbytes 页数：10 Pages

MOTOROLA

摩托罗拉

TrenchMOS transistor Logic level FET

GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor using ’trench’ technology. The device has very low on-state resistance. It is intended for use in dc to dc converters and general purpose switching applications. The PHT6N03LT is supplied in the SOT223 surfa

文件：53.16 Kbytes 页数：6 Pages

PHI

PHI

TrenchMOS transistor Standard level FET

GENERAL DESCRIPTION N-channel enhancement mode standard level field-effect power transistor in a plastic envelope suitable for surface mounting. Using ’trench’ technology, the device features very low on-state resistance and has integral zener diodes giving ESD protection up to 2kV. It is intende

文件：70.3 Kbytes 页数：10 Pages

PHI

PHI