丝印：TO220F-3L；Package：AP50N20F；200V N-Channel Enhancement Mode MOSFET

Features - VDS = 200V ID =50A - RDS(ON)

文件：2.18829 Mbytes 页数：7 Pages

APME

永源微电子

HiPerFET Power MOSFETs

HiPerFETs The hIPerFET family of Power MOSFETs is designed to provice superior dv/dt, performance while eliminating the need for discrete, fase recovery free wheeling rectifiers In a board range of power switching applications.

文件：104.03 Kbytes 页数：4 Pages

IXYS

艾赛斯

HiPerFET Power MOSFETs

HiPerFETs The hIPerFET family of Power MOSFETs is designed to provice superior dv/dt, performance while eliminating the need for discrete, fase recovery free wheeling rectifiers In a board range of power switching applications.

文件：104.03 Kbytes 页数：4 Pages

IXYS

艾赛斯

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

FEATURES ➤ Ultrafast body diode ➤ Rugged polysilicon gate cell structure ➤ Increased Unclamped Inductive Switching (UIS) capability ➤ Hermetically sealed, surface mount power package ➤ Low package inductance ➤ Very low thermal resistance ➤ Reverse polarity available upon request

文件：48.41 Kbytes 页数：2 Pages

MICROSEMI

美高森美