100V N-Channel Enhancement Mode MOSFET

APM

永源微

丝印：AP50N10D；Package：TO-252；N-Channel Enhancement Mode MOSFET

Description uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features VDS = 100V ID =50A RDS(ON)

文件：1.75429 Mbytes 页数：5 Pages

LEIDITECH

雷卯电子

N-CHANNEL MOSFET in a TO-220 Plastic Package

文件：866.59 Kbytes 页数：6 Pages

FOSHAN

蓝箭电子

N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ 100V, 50A, RDS(ON) = 30mΩ @VGS = 10V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ TO-220 & TO-263 package. ■ Lead free product is acquired.

文件：430.82 Kbytes 页数：4 Pages

CET

华瑞

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 100V, 50A, RDS(ON) = 30mW @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-220 & TO-263 package. Lead free product is acquired.

文件：642.37 Kbytes 页数：4 Pages

CET-MOS

华瑞