丝印：AP4N90D；Package：TO-252-3L；900V N-Channel Enhancement Mode MOSFET

Features - VDS = 900V ID =4.0A - RDS(ON)

文件：1.5727 Mbytes 页数：8 Pages

APME

永源微电子

900V N-Channel Enhancement Mode MOSFET

Features - VDS = 900V ID =4.0A - RDS(ON)

文件：1.5727 Mbytes 页数：8 Pages

APME

永源微电子

900V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withs

文件：621.35 Kbytes 页数：8 Pages

FAIRCHILD

仙童半导体

N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR

N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR ■ TYPICAL RDS(on)= 2.9 Ω ■ AVALANCHE RUGGED TECHNOLOGY ■ 100 AVALANCHE TESTED ■ REPETITIVE AVALANCHE DATA AT 100°C ■ LOW INPUT CAPACITANCE ■ LOW GATE CHARGE ■ APPLICATION ORIENTED CHARACTERIZATION APPLICATIONS ■ HIGH CURRENT, HIGH SPEED SWIT

文件：621.23 Kbytes 页数：10 Pages

STMICROELECTRONICS

意法半导体

N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR

N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR ■ TYPICAL RDS(on)= 2.9 Ω ■ AVALANCHE RUGGED TECHNOLOGY ■ 100 AVALANCHE TESTED ■ REPETITIVE AVALANCHE DATA AT 100°C ■ LOW INPUT CAPACITANCE ■ LOW GATE CHARGE ■ APPLICATION ORIENTED CHARACTERIZATION APPLICATIONS ■ HIGH CURRENT, HIGH SPEED SWIT

文件：621.23 Kbytes 页数：10 Pages

STMICROELECTRONICS

意法半导体