Bobbintron Electrical Corporation

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Active GNSS Dual-Band Stacked Patch Antenna

Features •Multiband Multi-Constellation Active GNSSAntenna ▪GPS : L1/L5 ▪GLONASS : G1 ▪Galileo : E1/E5a ▪Beidou : B1/B2a/B2b ▪IRNSS : L5 ▪SBAS : L1/L5 •High LNA gain of 40±2 dB with low noise figure •Very low noise figure (

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ABRACON

N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS

POWER MOS IV® SINGLE DIE ISOTOP® PACKAGE N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS

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Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

POWER MOS V® Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. • Fast

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