N-CHANNEL ENHANCEMENT MODE

Description The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The SO-8 package is universally preferred for all commercial-industrial surface mount applications and suited for

文件：78.42 Kbytes 页数：4 Pages

A-POWER

富鼎先进电子

N-CHANNEL ENHANCEMENT MODE

APEC

富鼎先进

N-Channel Enhancement Mode MOSFET

Features • 30V/11.5A, RDS(ON) = 9mΩ(typ.) @ VGS= 10V RDS(ON) =14.5mΩ(typ.) @ VGS= 4.5V •High Density Cell Design •Reliable and Rugged •SO-8 Package Applications •Power Management in Notebook Computer, Portable Equipment and Battery Powered Systems

文件：514.2 Kbytes 页数：9 Pages

ANPEC

茂达电子

N-Channel Enhancement Mode MOSFET

Features • 30V/11.5A, RDS(ON) = 9mΩ(typ.) @ VGS= 10V RDS(ON) =14.5mΩ(typ.) @ VGS= 4.5V •High Density Cell Design •Reliable and Rugged •SO-8 Package Applications •Power Management in Notebook Computer, Portable Equipment and Battery Powered Systems

文件：514.2 Kbytes 页数：9 Pages

ANPEC

茂达电子

N-Channel Enhancement Mode MOSFET

Features • 30V/11.5A, RDS(ON) = 9mΩ(typ.) @ VGS= 10V RDS(ON) =14.5mΩ(typ.) @ VGS= 4.5V •High Density Cell Design •Reliable and Rugged •SO-8 Package Applications •Power Management in Notebook Computer, Portable Equipment and Battery Powered Systems

文件：514.2 Kbytes 页数：9 Pages

ANPEC

茂达电子