AP4301BM-DTR

DUALOPAMPANDVOLTAGEREFERENCE

AP4301BP-C

DUALOPAMPANDVOLTAGEREFERENCE

GeneralDescription TheAP4301isamonolithicICspecificallydesignedtocontroltheoutputcurrentandvoltagelevelsofswitchmodebatterychargersandpowersupplies. Features •Inputoffsetvoltage:0.5mV •Supplycurrent:250µAperOp-Ampat5.0Vsupplyvoltage •Unitygainbandw

AP4301BP-C

DUALOPAMPANDVOLTAGEREFERENCE

AP4301BP-D

DUALOPAMPANDVOLTAGEREFERENCE

AP4301BP-D

DUALOPAMPANDVOLTAGEREFERENCE

GeneralDescription TheAP4301isamonolithicICspecificallydesignedtocontroltheoutputcurrentandvoltagelevelsofswitchmodebatterychargersandpowersupplies. Features •Inputoffsetvoltage:0.5mV •Supplycurrent:250µAperOp-Ampat5.0Vsupplyvoltage •Unitygainbandw

B4301

SAWRFfilterShortrangedevices

Features ■Packagesize1.4x1.1x0.4mm3 ■PackagecodeQCS5P ■RoHScompatible ■Approximateweight0.003g ■PackageforSurfaceMountTechnology(SMT) ■Ni,gold-platedterminals ■AEC-Q200qualifiedcomponentfamily(operabletemperaturerange–40˚Cto+85˚C) ■Elect

C4301-C

2.1mmDCCONNECTORADAPTER

Features: •Ratedto5AMax. •Suitableforlowvoltageuseonlyupto24Vdc •Attachinsecondstopoweryourequipment Description: OurRangeofpushonDCconnectorsmanufacturedforusewithexternalpowersupplies,whichallowyoutoconvertonetypeofconnectortoanother.

CED4301

P-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■-40V,-20A,RDS(ON)=42mΩ@VGS=-10V. RDS(ON)=65mΩ@VGS=-4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package.

CED4301

P-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■-40V,-20A,RDS(ON)=42mΩ@VGS=-10V. RDS(ON)=65mΩ@VGS=-4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package.

CED4301

P-ChannelEnhancementModeFieldEffectTransistor

FEATURES -40V,-20A,RDS(ON)=42mW@VGS=-10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RDS(ON)=65mW@VGS=-4.5V. Leadfreeproductisacquired.