CEM4301

P-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■-40V,-6A,RDS(ON)=42mΩ@VGS=-10V. RDS(ON)=65mΩ@VGS=-4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■SurfacemountPackage.

CET4301

P-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■-40V,-6.3A,RDS(ON)=44mΩ@VGS=-10V. RDS(ON)=68mΩ@VGS=-4.5V. ■HighdensecelldesignforextremelylowRDS(ON). ■Ruggedandreliable. ■Leadfreeproductisacquired. ■SOT-223package.

CEU4301

P-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■-40V,-20A,RDS(ON)=42mΩ@VGS=-10V. RDS(ON)=65mΩ@VGS=-4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package.

CEU4301

P-ChannelEnhancementModeFieldEffectTransistor

FEATURES -40V,-20A,RDS(ON)=42mW@VGS=-10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RDS(ON)=65mW@VGS=-4.5V. Leadfreeproductisacquired.

CHM4301PAPT

P-ChannelEnhancementModeFieldEffectTransistor

CHM4301ZPT

P-ChannelEnhancementModeFieldEffectTransistor

VOLTAGE40VoltsCURRENT6.3Ampere FEATURE *Smallflatpackage.(SC-73/SOT-223) *HighdensitycelldesignforextremelylowRDS(ON). *Ruggedandreliable. *Highsaturationcurrentcapability. APPLICATION *Servomotorcontrol. *PowerMOSFETgatedrivers. *Otherswitchingapplicat

CST-4301E

0.4InchTriadDigitsDisplay

CST-4301G

0.4InchTriadDigitsDisplay

CST-4301S

0.4InchTriadDigitsDisplay

DS4301

Nonvolatile,32-PositionDigitalPotentiometer