GU40N03

N-CHANNELENHANCEMENTMODEPOWERMOSFET

BVDSS30V RDS(ON)17mΩ ID40A Description TheGU40N03providethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness.TheTO-263packageisuniversallypreferredforallcommercial-industrialsurfacemountapplicat

H40N03E

N-ChannelEnhancement-ModeMOSFET(25V,40A)

Features •RDS(on)=16mΩ@VGS=10V,ID=20A •RDS(on)=25mΩ@VGS=4.5V,ID=20A •Advancedtrenchprocesstechnology •HighDensityCellDesignforUltraLowOn-Resistance •SpeciallyDesignedforDC/DCConvertersandMotorDrivers •FullyCharacterizedAvalancheVoltageandCurrent •ImprovedShoo

IRF40N03

N-CHANNELPowerMOSFET

FEATURES ♦LowONResistance ♦LowGateCharge ♦PeakCurrentvsPulseWidthCurve ♦InductiveSwitchingCurves APPLICATION ♦FastSwitching ♦SimpleDriveRequirement ♦LowGateCharge

IRF40N03

N-CHANNELPowerMOSFET

[magic-matsu]

ME40N03

N-Channel30-V(D-S)MOSFET

ME40N03P

N-Channel30-V(D-S)MOSFET

ME40N03P-G

N-Channel30-V(D-S)MOSFET

MI40N03

N-Channel30-V(D-S)MOSFET

MTD40N03

N-Channel30-V(D-S)MOSFET

NTD40N03R

PowerMOSFET45A,25V,N−ChannelDPAK

Features •PlanarHD3eProcessforFastSwitchingPerformance •LowRDS(on)toMinimizeConductionLoss •LowCisstoMinimizeDriverLoss •LowGateCharge •OptimizedforHighSideSwitchingRequirementsin High−EfficiencyDC−DCConverters •ThesearePb−FreeDevices