CC3301ENJARSBR

CC330xSimpleLink™Wi-Fi®6andBluetooth®LowEnergyTransceiver

1Features •HighlyoptimizedWi-Fi®6andBluetooth® LowEnergy5.2systemforlow-costindustrial embeddedapplications •DesignedtointegratewithanyMPUorMCUhost capableofrunningaTCP/IPstack •Wi-Fi6 –MAC,baseband,andRFtransceiverwith supportforIEEE802.11b/g/n/ax

CC3301MOD

CC330xMODSimpleLink™Wi-Fi6andBluetooth®LowEnergyCompanionModule

1Features KeyFeatures •Wi-Fi6(802.11ax) •Bluetooth®LowEnergy5.4inCC33x1MOD •CompanionmoduletoanyprocessororMCUhost capableofrunningaTCP/IPstack •Integrated2.4GHzPAforcompletewireless systemwithupto+18dBmoutputpower •Operatingtemperature:–40°Cto+85°C

CC3301MODENIAMOZR

CC330xMODSimpleLink™Wi-Fi6andBluetooth®LowEnergyCompanionModule

1Features KeyFeatures •Wi-Fi6(802.11ax) •Bluetooth®LowEnergy5.4inCC33x1MOD •CompanionmoduletoanyprocessororMCUhost capableofrunningaTCP/IPstack •Integrated2.4GHzPAforcompletewireless systemwithupto+18dBmoutputpower •Operatingtemperature:–40°Cto+85°C

CED3301

P-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■-30V,-28A,RDS(ON)=32mΩ@VGS=-10V. RDS(ON)=50mΩ@VGS=-4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package.

CED3301

P-ChannelEnhancementModeFieldEffectTransistor

FEATURES -30V,-28A,RDS(ON)=32mW@VGS=-10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RDS(ON)=50mW@VGS=-4.5V. Leadfreeproductisacquired.

CEM3301

P-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■-30V,-7.0A,RDS(ON)=32mΩ@VGS=-10V. RDS(ON)=50mΩ@VGS=-4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■SurfacemountPackage.

CEM3301

P-ChannelMOSFETusesadvancedtrenchtechnology

CEM3301

P-ChannelEnhancementModeFieldEffectTransistor

FEATURES -30V,-7.0A,RDS(ON)=32mW@VGS=-10V. RDS(ON)=50mW@VGS=-4.5V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. SurfacemountPackage. Leadfreeproductisacquired.

CEU3301

P-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■-30V,-28A,RDS(ON)=32mΩ@VGS=-10V. RDS(ON)=50mΩ@VGS=-4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package.

CEU3301

P-ChannelEnhancementModeFieldEffectTransistor