Highly Integrated, Cost-Effective, USB PD3.0 Charger Solution for Portable and Consumer Applications

Applications USB PD3.0: Smartphone fast chargers Notebook computer adaptors

文件：413.7 Kbytes 页数：2 Pages

DIODES

美台半导体

Highly Integrated, Cost-Effective, USB PD3.0 Charger Solution for Portable and Consumer Applications

Applications USB PD3.0: Smartphone fast chargers Notebook computer adaptors

文件：413.7 Kbytes 页数：2 Pages

DIODES

美台半导体

丝印：D5；Package：SOT26；MULTI-MODE PWM CONTROLLER

Features - Very Low Start-Up Current - Multi-Mode Control with CCM+QR - Soft Start During Startup Process - Frequency Fold Back for High Average Efficiency - Constant Over Current Protection - Secondary Winding Short Protection with FOCP - Frequency Dithering for Reducing EMI - Useful Pin

文件：684.4 Kbytes 页数：12 Pages

DIODES

美台半导体

HIGHLY INTEGRATED ACTIVE CLAMP FLYBACK PWM CONTROLLER

Features - Active Clamp Flyback Topology with Recycled Leakage Energy and Pseudo Zero Voltage Switching Functions - High-Voltage Startup - Embedded VCC LDO for VCCL Pin to Guarantee Wide Range Output Voltage - Non-Audible-Noise Quasi-Resonant Control - Soft Start During Startup Process - F

文件：1.42887 Mbytes 页数：13 Pages

DIODES

美台半导体

P-CHANNEL ENHANCEMENT MODE POWER MOSFET

Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, low on-resistance and cost-effectiveness. This device is suited for low voltage and lower power applications. ▼ Simple Drive Requirement ▼2.5V Gate Drive Capability ▼ Fas

文件：170.16 Kbytes 页数：6 Pages

A-POWER

富鼎先进电子

Simple Drive Requirement, 2.5V Gate Drive Capability

Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, low on-resistance and cost-effectiveness. This device is suited for low voltage and battery power applications. ▼ Simple Drive Requirement ▼2.5V Gate Drive Capability ▼ F

文件：111.1 Kbytes 页数：6 Pages

A-POWER

富鼎先进电子

P-CHANNEL ENHANCEMENT MODE POWER MOSFET

Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, low on-resistance and cost-effectiveness. This device is suited for low voltage and lower power applications. ▼ Simple Drive Requirement ▼2.5V Gate Drive Capability ▼ Fas

文件：170.16 Kbytes 页数：6 Pages

A-POWER

富鼎先进电子

Simple Drive Requirement, Simple Drive Requirement

Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, low on-resistance and cost-effectiveness. This device is suited for low voltage and battery power applications. ▼ Simple Drive Requirement ▼2.5V Gate Drive Capability ▼ F

文件：111.1 Kbytes 页数：6 Pages

A-POWER

富鼎先进电子

QUASI-RESONANT FLYBACK GAN CONTROLLER

Features - Up to 150kHz Quasi-Resonant Operation Mode for High Output Voltage - Frequency Foldback for High Average Efficiency - High Reliability Gate Driver for GaN FET - Built-in High-Voltage Startup - Soft Start During Startup Process - Integrated X2 Capacitor Discharge Function - Adapti

文件：1.17275 Mbytes 页数：12 Pages

DIODES

美台半导体

丝印：33510；Package：SSOP-9；QUASI-RESONANT FLYBACK GAN CONTROLLER

Features - Up to 150kHz Quasi-Resonant Operation Mode for High Output Voltage - Frequency Foldback for High Average Efficiency - High Reliability Gate Driver for GaN FET - Built-in High-Voltage Startup - Soft Start During Startup Process - Integrated X2 Capacitor Discharge Function - Adapti

文件：1.17275 Mbytes 页数：12 Pages

DIODES

美台半导体