60V N-Channel Enhancement Mode MOSFET

AP30N06D采用先进的沟道技术，提供出色的RDS（ON），低栅极电荷和栅极电压低至1.8V的操作。该器件适用于负载开关或PWM应用。 VDS = 60V，ID = 30A \nRDS（ON）<22mΩ\n@ V GS =10V RDS（ON）<28mΩ\n@ V GS = 4.5V 高功率和电流处理能力\n无铅产品\nTO-252表贴封装\n;

APM

永源微

MOSFET

Features - Super low gate charge. - Advanced high cell density tench technology. - Excellent Cdv/ dt effect decline.

文件：523.19 Kbytes 页数：6 Pages

COMCHIP

典琦

60V N-Channel MOSFET

文件：663.34 Kbytes 页数：9 Pages

FAIRCHILD

仙童半导体

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID=30A@ TC=25℃ ·Drain Source Voltage- : VDSS=60V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.04Ω(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC conv

文件：368.29 Kbytes 页数：2 Pages

ISC

无锡固电