丝印：AP30；150mA Low Supply Current LDO REGULATOR

FEATURES • Supply Current Typ. 1.0μA (Except the current through CE pull down circuit) • Standby Current Typ. 0.1μA • Dropout Voltage

文件：1.26978 Mbytes 页数：36 Pages

NISSHINBO

日清纺微电子

丝印：AP3041M-G1；Package：SOIC-16；BOOST CONTROLLER FOR WLED DRIVER IN MEDIUM-SIZED LCD PANEL

Features - Input Voltage Range: 5V to 27V - 1A Peak and 10V MOSFET Gate Driver - 20ns Quick MOSFET Gate Driver - Duty Cycle Limit of 90 - Programmable UVLO - PWM Dimming Control - Programmable Over Voltage Protection - LED Open Protection - LED Short Circuit Protection - Diode Short Circ

文件：445.88 Kbytes 页数：14 Pages

DIODES

美台半导体

丝印：AP30N02BF；Package：QFN2X2-6L；20V N-Channel Enhancement Mode MOSFET

Features - VDS = 20V ID =30A - RDS(ON)

文件：1.1409 Mbytes 页数：7 Pages

APME

永源微电子

丝印：AP30N02DF；Package：PDFN3X3-8L；20V N-Channel Enhancement Mode MOSFET

Features - VDS = 20V ID =30A - RDS(ON)

文件：1.17057 Mbytes 页数：7 Pages

APME

永源微电子

丝印：AP30N02S；Package：SOP-8L；20V N-Channel Enhancement Mode MOSFET

Features - VDS = 20V ID =30A - RDS(ON)

文件：1.3714 Mbytes 页数：7 Pages

APME

永源微电子

丝印：AP30N03DF；Package：PDFN3X3-8L；30V N-Channel Enhancement Mode MOSFET

Features - VDS = 30V ID =60A - RDS(ON)

文件：1.37335 Mbytes 页数：7 Pages

APME

永源微电子

丝印：AP30N03NF；Package：PDFN5X6-8L；30V N-Channel Enhancement Mode MOSFET

Features - VDS = 30V ID =30A - RDS(ON)

文件：1.19153 Mbytes 页数：7 Pages

APME

永源微电子

丝印：AP30N03SI；Package：SOT89-3L；30V N-Channel Enhancement Mode MOSFET

Features - VDS=30V ID =30A - RDS(ON)

文件：1.44179 Mbytes 页数：7 Pages

APME

永源微电子

丝印：AP30N04BF；Package：DFN2X2-6L；40V N-Channel Enhancement Mode MOSFET

Features - VDS =40V ID =30A - RDS(ON)

文件：662.08 Kbytes 页数：7 Pages

APME

永源微电子

丝印：AP30N06BD；Package：TO-252-3L；60V N-Channel Enhancement Mode MOSFET

General Features VDS = 60V ID =30A RDS(ON)

文件：1.47733 Mbytes 页数：7 Pages

APME

永源微电子