AP211技术资料参数贸易商美台半导体第4页-114ic电子网

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零件编号	下载订购	功能描述/丝印	制造商上传企业	LOGO
AP2114M-1.2TRG1	文件：914.27 Kbytes Page：33 Pages	Marking：2114M-1.2G1；Package：SOIC-8；1A LOW NOISE CMOS LDO REGULATOR WITH ENABLE Features •OutputVoltageAccuracy:±1.5 •OutputCurrent:1A(Min) •Fold-backShortCurrentProtection:50mA •LowDropoutVoltage(3.3V):450mV(Typ) @IOUT=1A •Stablewith4.7μFFlexibleCap:Ceramic, TantalumandAluminumElectrolytic •ExcellentLineRegulation:0.02/V(Typ), 0.1/V	DIODESDiodes Incorporated 美台半导体	DIODES
AP2114M-1.5TRG1	文件：914.27 Kbytes Page：33 Pages	Marking：2114M-1.5G1；Package：SOIC-8；1A LOW NOISE CMOS LDO REGULATOR WITH ENABLE Features •OutputVoltageAccuracy:±1.5 •OutputCurrent:1A(Min) •Fold-backShortCurrentProtection:50mA •LowDropoutVoltage(3.3V):450mV(Typ) @IOUT=1A •Stablewith4.7μFFlexibleCap:Ceramic, TantalumandAluminumElectrolytic •ExcellentLineRegulation:0.02/V(Typ), 0.1/V	DIODESDiodes Incorporated 美台半导体	DIODES
AP2114M-1.8TRG1	文件：914.27 Kbytes Page：33 Pages	Marking：2114M-1.8G1；Package：SOIC-8；1A LOW NOISE CMOS LDO REGULATOR WITH ENABLE Features •OutputVoltageAccuracy:±1.5 •OutputCurrent:1A(Min) •Fold-backShortCurrentProtection:50mA •LowDropoutVoltage(3.3V):450mV(Typ) @IOUT=1A •Stablewith4.7μFFlexibleCap:Ceramic, TantalumandAluminumElectrolytic •ExcellentLineRegulation:0.02/V(Typ), 0.1/V	DIODESDiodes Incorporated 美台半导体	DIODES
AP2114M-2.5TRG1	文件：914.27 Kbytes Page：33 Pages	Marking：2114M-2.5G1；Package：SOIC-8；1A LOW NOISE CMOS LDO REGULATOR WITH ENABLE Features •OutputVoltageAccuracy:±1.5 •OutputCurrent:1A(Min) •Fold-backShortCurrentProtection:50mA •LowDropoutVoltage(3.3V):450mV(Typ) @IOUT=1A •Stablewith4.7μFFlexibleCap:Ceramic, TantalumandAluminumElectrolytic •ExcellentLineRegulation:0.02/V(Typ), 0.1/V	DIODESDiodes Incorporated 美台半导体	DIODES
AP2114M-3.3TRG1	文件：914.27 Kbytes Page：33 Pages	Marking：2114M-3.3G1；Package：SOIC-8；1A LOW NOISE CMOS LDO REGULATOR WITH ENABLE Features •OutputVoltageAccuracy:±1.5 •OutputCurrent:1A(Min) •Fold-backShortCurrentProtection:50mA •LowDropoutVoltage(3.3V):450mV(Typ) @IOUT=1A •Stablewith4.7μFFlexibleCap:Ceramic, TantalumandAluminumElectrolytic •ExcellentLineRegulation:0.02/V(Typ), 0.1/V	DIODESDiodes Incorporated 美台半导体	DIODES
AP2114M-ADJG1	文件：914.27 Kbytes Page：33 Pages	Marking：2114M-ADJG1；Package：SOIC-8；1A LOW NOISE CMOS LDO REGULATOR WITH ENABLE Features •OutputVoltageAccuracy:±1.5 •OutputCurrent:1A(Min) •Fold-backShortCurrentProtection:50mA •LowDropoutVoltage(3.3V):450mV(Typ) @IOUT=1A •Stablewith4.7μFFlexibleCap:Ceramic, TantalumandAluminumElectrolytic •ExcellentLineRegulation:0.02/V(Typ), 0.1/V	DIODESDiodes Incorporated 美台半导体	DIODES
AP2114M-ADJTRG1	文件：914.27 Kbytes Page：33 Pages	Marking：2114M-ADJG1；Package：SOIC-8；1A LOW NOISE CMOS LDO REGULATOR WITH ENABLE Features •OutputVoltageAccuracy:±1.5 •OutputCurrent:1A(Min) •Fold-backShortCurrentProtection:50mA •LowDropoutVoltage(3.3V):450mV(Typ) @IOUT=1A •Stablewith4.7μFFlexibleCap:Ceramic, TantalumandAluminumElectrolytic •ExcellentLineRegulation:0.02/V(Typ), 0.1/V	DIODESDiodes Incorporated 美台半导体	DIODES
AP2114MP-1.2TRG1	文件：914.27 Kbytes Page：33 Pages	Marking：2114MP-1.2G1；Package：PSOP-8；1A LOW NOISE CMOS LDO REGULATOR WITH ENABLE Features •OutputVoltageAccuracy:±1.5 •OutputCurrent:1A(Min) •Fold-backShortCurrentProtection:50mA •LowDropoutVoltage(3.3V):450mV(Typ) @IOUT=1A •Stablewith4.7μFFlexibleCap:Ceramic, TantalumandAluminumElectrolytic •ExcellentLineRegulation:0.02/V(Typ), 0.1/V	DIODESDiodes Incorporated 美台半导体	DIODES
AP2114MP-1.5TRG1	文件：914.27 Kbytes Page：33 Pages	Marking：2114MP-1.5G1；Package：PSOP-8；1A LOW NOISE CMOS LDO REGULATOR WITH ENABLE Features •OutputVoltageAccuracy:±1.5 •OutputCurrent:1A(Min) •Fold-backShortCurrentProtection:50mA •LowDropoutVoltage(3.3V):450mV(Typ) @IOUT=1A •Stablewith4.7μFFlexibleCap:Ceramic, TantalumandAluminumElectrolytic •ExcellentLineRegulation:0.02/V(Typ), 0.1/V	DIODESDiodes Incorporated 美台半导体	DIODES
AP2114MP-1.8TRG1	文件：914.27 Kbytes Page：33 Pages	Marking：2114MP-1.8G1；Package：PSOP-8；1A LOW NOISE CMOS LDO REGULATOR WITH ENABLE Features •OutputVoltageAccuracy:±1.5 •OutputCurrent:1A(Min) •Fold-backShortCurrentProtection:50mA •LowDropoutVoltage(3.3V):450mV(Typ) @IOUT=1A •Stablewith4.7μFFlexibleCap:Ceramic, TantalumandAluminumElectrolytic •ExcellentLineRegulation:0.02/V(Typ), 0.1/V	DIODESDiodes Incorporated 美台半导体	DIODES

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详细参数

型号：
AP211
制造商：
RFHIC
制造商全称：
RFHIC
功能描述：
MMIC

供应商	型号	品牌	批号	封装	库存	备注	价格
贸泽芯城（深圳）电子科技有限公司	AP211	RFHIC	23+	SOP8	5000	原厂授权代理,海外优势订货渠道。可提供大量库存,详	询价
深圳市一线半导体有限公司	AP2117BK-3.0TRE1	BCD	24+		25		询价
深圳市恒创达实业有限公司	AP2114H-1.8TRG1	DIODES	17+	NA	6200	100%原装正品现货	询价
深圳市凌旭科技有限公司	AP2111SG-13	DIODES	2016+	SOP8	2735	只做原装,假一罚十,公司可开17%增值税发票!	询价
深圳市毅创腾电子科技有限公司	AP2111H-2.5TRG1	BCD		SOT223	3200	原装长期供货!	询价
深圳市博浩通科技有限公司	AP2111SG-13DITR	ON	23+	SOP-8	7750	全新原装优势	询价
深圳市利加科技有限公司	AP2111MPG-13	DIODES	16+	MSOP8	1890	全新原装现货	询价
深圳市鹏和科技有限公司	AP2112R5-1.2TRG1	BCD	24+	SOT-23	5000	只做原装公司现货	询价
深圳市永贝尔科技有限公司	AP2111	BCDSEMI	23+	NA	19960	只做进口原装,终端工厂免费送样	询价
深圳宇航军工半导体有限公司	AP2114HA-3.3TRG1	NA	19+		63666	原厂代理渠道,每一颗芯片都可追溯原厂；	询价

更多AP211供应商更新时间2025-5-29 11:09:00

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