150V N-Channel Enhancement Mode MOSFET

Features - VDS = 150V ID =190A - RDS(ON)

文件：1.04268 Mbytes 页数：7 Pages

APME

永源微电子

150V N-Channel Enhancement Mode MOSFET

Features - VDS = 150V ID =190A - RDS(ON)

文件：1.04268 Mbytes 页数：7 Pages

APME

永源微电子

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID=27.5A@ TC=25℃ ·Drain Source Voltage- : VDSS=150V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 19mΩ(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC co

文件：323.01 Kbytes 页数：2 Pages

ISC

无锡固电

N-Channel PowerTrench짰 MOSFET 150V, 27.4A, 19m廓

文件：237.18 Kbytes 页数：9 Pages

FAIRCHILD

仙童半导体