丝印：1N50M-AP；Package：SOT23-3L；500V N-Channel Enhancement Mode MOSFET

Features - VDS = 500V ID =1A - RDS(ON)

文件：1.44759 Mbytes 页数：7 Pages

APME

永源微电子

TMOS POWER FET 1.0 AMPERE 500 VOLTS RDS(on) = 5.0 OHM

This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage–blocking capability without degrading performance over time. In addition this advanced TMOS E–FET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design al

文件：267.79 Kbytes 页数：10 Pages

MOTOROLA

摩托罗拉

TMOS POWER FET 1.0 AMPERES 500 VOLTS RDS(on) = 5.0 OHM

TMOS E−FET Power Field Effect Transistor N–Channel Enhancement–Mode Silicon Gate This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage–blocking capability without degrading performance over time. In addition, this advanced TMOS E–FET is designed to withstand hi

文件：159.26 Kbytes 页数：8 Pages

MOTOROLA

摩托罗拉

PowerMOS transistor

GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope featuring high avalanche energy capability, stable blocking voltage, fast switching and high thermal cycling performance with low thermal resistance. Intended for use in Switched Mode Power Supplies

文件：21.1 Kbytes 页数：4 Pages

PHI

PHI