P-Channel Enhancement Mode Field Effect Transistor

General Description The AOU413 uses advanced trench technology to provide excellent RDS(ON), low gate charge and low gate resistance. With the excellent thermal resistance of the DPAK package, this device is well suited for high current load applications. Standard Product AOU413 is Pb-free (meets

文件：72.34 Kbytes 页数：5 Pages

AOSMD

万国半导体

isc P-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= -12A@ TC=25℃ ·Drain Source Voltage : VDSS= -40V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 45mΩ(Max) @ VGS= -10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC

文件：353.34 Kbytes 页数：2 Pages

ISC

无锡固电

P-Channel 40 V (D-S) MOSFET

FEATURES • Compliant to RoHS Directive 2002/95/EC

文件：977.27 Kbytes 页数：7 Pages

VBSEMI

微碧半导体

P-Channel Enhancement Mode Field Effect Transistor

AOS

美国万代

P-Channel Enhancement Mode Field Effect Transistor

General Description The AOU413 uses advanced trench technology to provide excellent RDS(ON), low gate charge and low gate resistance. With the excellent thermal resistance of the DPAK package, this device is well suited for high current load applications. Standard Product AOU413 is Pb-free (meets

文件：72.34 Kbytes 页数：5 Pages

AOSMD

万国半导体