高压MOSFET (500V - 1000V)

600V, aMOS5™ N-Channel Power Transistor

AOS

美国万代

isc N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 38A@ TC=25℃ · Drain Source Voltage -VDSS= 600V(Min) · Static Drain-Source On-Resistance -RDS(on) = 0.095Ω(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and SMPS with PFC

文件：306.98 Kbytes 页数：2 Pages

ISC

无锡固电

600V,aMOS5TM N-Channel Power Transistor

General Description • Proprietary αMOS5TM technology• Low RDS(ON)• Optimized switching parameters for better EMI performance• Enhanced body diode for robustness and fast reverse recovery Applications • SMPS with PFC, Flyback and LLC topologies• Micro inverter with DC/AC inverter topology

文件：463.58 Kbytes 页数：6 Pages

AOSMD

万国半导体

600V,aMOS5TM N-Channel Power Transistor

General Description • Proprietary αMOS5TM technology• Low RDS(ON)• Optimized switching parameters for better EMI performance• Enhanced body diode for robustness and fast reverse recovery Applications • SMPS with PFC, Flyback and LLC topologies• Micro inverter with DC/AC inverter topology

文件：463.58 Kbytes 页数：6 Pages

AOSMD

万国半导体