AOTF5N100MOS(场效应管)说明书PDF资料市场行情-114ic电子网

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零件编号	下载&订购	功能描述	制造商&上传企业	LOGO
IXFA5N100P	文件：161.13 Kbytes Page：4 Pages	PolarPowerMOSFETHiPerFET	IXYS IXYS Corporation	IXYS
IXFH5N100	文件：295.27 Kbytes Page：8 Pages	HIPERFETPowerMOSFTETs HiPerFETs ThehIPerFETfamilyofPowerMOSFETsisdesignedtoprovicesuperiordv/dt,performancewhileeliminatingtheneedfordiscrete,faserecoveryfreewheelingrectifiersInaboardrangeofpowerswitchingapplications.	IXYS IXYS Corporation	IXYS
IXFH5N100	文件：371.66 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent–ID=5A@TC=25℃ ·DrainSourceVoltage- :VDSS=1000V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=2.6Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCco	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
IXFH5N100P	文件：371.68 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent–ID=5A@TC=25℃ ·DrainSourceVoltage- :VDSS=1000V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=2.8Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCco	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
IXFH5N100P	文件：161.13 Kbytes Page：4 Pages	PolarPowerMOSFETHiPerFET	IXYS IXYS Corporation	IXYS
IXFM5N100	文件：295.27 Kbytes Page：8 Pages	HIPERFETPowerMOSFTETs HiPerFETs ThehIPerFETfamilyofPowerMOSFETsisdesignedtoprovicesuperiordv/dt,performancewhileeliminatingtheneedfordiscrete,faserecoveryfreewheelingrectifiersInaboardrangeofpowerswitchingapplications.	IXYS IXYS Corporation	IXYS
IXFP5N100	文件：295.01 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=5A@TC=25℃ ·DrainSourceVoltage-VDSS=1000V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=2.8Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andPFCCircuits..	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
IXFP5N100P	文件：161.13 Kbytes Page：4 Pages	PolarPowerMOSFETHiPerFET	IXYS IXYS Corporation	IXYS
IXFP5N100PM	文件：122.34 Kbytes Page：4 Pages	N-ChannelEnhancementModeAvalancheRated	IXYS IXYS Corporation	IXYS
IXTH5N100	文件：104.2 Kbytes Page：4 Pages	StandardPowerMOSFET StandardPowerMOSFET N-ChannelEnhancementMode Features •Internationalstandardpackages •LowRDS(on)HDMOSTMprocess •Ruggedpolysilicongatecellstructure •Lowpackageinductance(	IXYS IXYS Corporation	IXYS
IXTH5N100	文件：381.55 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
IXTH5N100A	文件：381.56 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
IXTH5N100A	文件：104.2 Kbytes Page：4 Pages	StandardPowerMOSFET StandardPowerMOSFET N-ChannelEnhancementMode Features •Internationalstandardpackages •LowRDS(on)HDMOSTMprocess •Ruggedpolysilicongatecellstructure •Lowpackageinductance(	IXYS IXYS Corporation	IXYS
IXTM5N100	文件：104.2 Kbytes Page：4 Pages	StandardPowerMOSFET StandardPowerMOSFET N-ChannelEnhancementMode Features •Internationalstandardpackages •LowRDS(on)HDMOSTMprocess •Ruggedpolysilicongatecellstructure •Lowpackageinductance(	IXYS IXYS Corporation	IXYS
IXTM5N100	文件：312.16 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor DESCRIPTION •Designedforuseinswitchmodepowersuppliesandgeneralpurposeapplications. FEATURES •DrainCurrentID=5A@TC=25℃ •DrainSourceVoltage-:VDSS=1000V(Min) •StaticDrain-SourceOn-Resistance:RDS(on)=2.4Ω(Max) •100avalanchetested •MinimumLot-to-Lotvariations	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
IXTM5N100A	文件：312.16 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor DESCRIPTION •Designedforuseinswitchmodepowersuppliesandgeneralpurposeapplications. FEATURES •DrainCurrentID=5A@TC=25℃ •DrainSourceVoltage-:VDSS=1000V(Min) •StaticDrain-SourceOn-Resistance:RDS(on)=2Ω(Max) •100avalanchetested •MinimumLot-to-Lotvariationsf	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
IXTM5N100A	文件：104.2 Kbytes Page：4 Pages	StandardPowerMOSFET StandardPowerMOSFET N-ChannelEnhancementMode Features •Internationalstandardpackages •LowRDS(on)HDMOSTMprocess •Ruggedpolysilicongatecellstructure •Lowpackageinductance(	IXYS IXYS Corporation	IXYS
MTH5N100	文件：292.91 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=5A@TC=25℃ ·DrainSourceVoltage-VDSS=1000V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=3Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
MTM5N100	文件：260.769 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=5A@TC=25℃ ·DrainSourceVoltage-VDSS=1000V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=3Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
OM5N100NK	文件：19.02 Kbytes Page：2 Pages	POWERMOSFETSINATO-3PACKAGE	ETCList of Unclassifed Manufacturers 未分类制造商	ETC

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供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市创新迹电子有限公司	AOTF5N100MOS(场效应管)	AO/万代	2021+	TO-220F	9000	原装现货,随时欢迎询价	询价
深圳市威尔健半导体有限公司	AOTF5N100MOS(场效应管)	AO/万代	23+	TO-220F	76865		询价
深圳宇航军工半导体有限公司	AOTF5N50	NA	19+		63508	原厂代理渠道,每一颗芯片都可追溯原厂；	询价
深圳市瑞新盛科技有限公司	AOTF5N50	AOS		TO-220F	20000	原装正品	询价
深圳市华斯顿科技有限公司	AOTF5N50	AOS	22+23+	TO-220	27932	绝对原装正品全新进口深圳现货	询价
上海市鑫鸿达电子	AOTF5N50	ALPHA&OMEGA	2022+		350	全新原装货期两周	询价
瀚佳科技(深圳)有限公司	AOTF5N50	AOS	20+	TO220F	65300	一级代理/放心购买!	询价
深圳市拓亿芯电子有限公司	AOTF5N50	AOS	23+	TO-220F	30000	全新原装现货,价格优势	询价
深圳市百诺芯科技有限公司	AOTF5N50	AOS/万代	23+	TO-220F	24190	原装正品代理渠道价格优势	询价
深圳兆威电子有限公司	AOTF5N50	AOT/万代	23+	TO-220F	90000	只做原装全系列供应价格优势可开增票	询价

更多AOTF5N100MOS(场效应管)供应商更新时间2024-9-25 14:00:00

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