600V 11A a MOS

General Description The AOT11S60& AOB11S60 & AOTF11S60 have been fabricated using the advanced αMOSTM high voltage process that is designed to deliver high levels of performance and robustness in switching applications. By providing low RDS(on), Qg and EOSS along with guaranteed avalanche

文件：508.66 Kbytes 页数：7 Pages

AOSMD

万国半导体

600V 11A a MOS

General Description The AOT11S60& AOB11S60 & AOTF11S60 have been fabricated using the advanced αMOSTM high voltage process that is designed to deliver high levels of performance and robustness in switching applications. By providing low RDS(on), Qg and EOSS along with guaranteed avalanche

文件：508.66 Kbytes 页数：7 Pages

AOSMD

万国半导体

DFN 8X8 PACKAGE MARKINGS DESCRIPTION

文件：93.91 Kbytes 页数：1 Pages

AOSMD

万国半导体

DFN 8X8 PACKAGE MARKINGS DESCRIPTION

文件：93.91 Kbytes 页数：1 Pages

AOSMD

万国半导体

600V 11A a MOS TM Power Transistor

General Description The AOW11S60 & AOWF11S60 have been fabricated using the advanced αMOSTM high voltage process that is designed to deliver high levels of performance and robustness in switching applications. By providing low RDS(on), Qg and EOSS along with guaranteed avalanche capability t

文件：282.99 Kbytes 页数：6 Pages

AOSMD

万国半导体