丝印：AOT；Package：3LdSOT-23；Precision Low Power FGA Voltage References

The ISL60002 FGA voltage references are very high precision analog voltage references fabricated using the Renesas proprietary Floating Gate Analog (FGA) technology and feature low supply voltage operation at ultra-low 350nA operating current. Features • Reference voltages . . . . . 1.024V, 1.2V

文件：2.35923 Mbytes 页数：40 Pages

RENESAS

瑞萨

丝印：AOT；Package：3LdSOT-23；Precision Low Power FGA Voltage References

The ISL60002 FGA voltage references are very high precision analog voltage references fabricated using the Renesas proprietary Floating Gate Analog (FGA) technology and feature low supply voltage operation at ultra-low 350nA operating current. Features • Reference voltages . . . . . 1.024V, 1.2V

文件：2.35923 Mbytes 页数：40 Pages

RENESAS

瑞萨

600V, a MOS5 TM N-Channel Power Transistor

General Description • Proprietary αMOS5TM technology • Low RDS(ON) • Optimized switching parameters for better EMI performance • Enhanced body diode for robustness and fast reverse • RoHS 2.0 and Halogen-Free Compliant Applications • PFC and PWM stages (LLC, PSFB,TTF) of Server, Tel

文件：405.21 Kbytes 页数：6 Pages

AOSMD

万国半导体

600V,aMOS5TM N-Channel Power Transistor

General Description • Proprietary αMOS5TM technology• Low RDS(ON)• Optimized switching parameters for better EMI performance• Enhanced body diode for robustness and fast reverse recovery Applications • SMPS with PFC, Flyback and LLC topologies• Micro inverter with DC/AC inverter topology

文件：463.58 Kbytes 页数：6 Pages

AOSMD

万国半导体

600V, 10A Alpha IGBT with Diode

General Description The Alpha IGBTTM line of products offers best-in-class performance in conduction and switching losses, with robust short circuit capability. They are designed for ease of paralleling, minimal gate spike under high dV/dt conditions and resistance to oscillations. The soft copac

文件：646.66 Kbytes 页数：9 Pages

AOSMD

万国半导体

650V, 10A AlphaIGBTTM With Soft and Fast Recovery Anti-Parallel Diode

General Description • Latest AlphaIGBT (αIGBT) technology• 650V breakdown voltage• Very fast and soft recovery freewheeling diode• High efficient turn-on di/dt controllability• Low VCE(sat) enables high efficiencies• Low turn-off switching loss and softness• Very good EMI behavior• High short-cir

文件：546.59 Kbytes 页数：8 Pages

AOSMD

万国半导体

600V, 10A N-Channel MOSFET

General Description The AOT10N60 & AOB10N60 & AOTF10N60 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.By providing low RDS(on), Ciss and Crss along with guaranteed aval

文件：182.74 Kbytes 页数：6 Pages

AOSMD

万国半导体

600V,10A N-Channel MOSFET

General Description The AOT10N60 & AOB10N60 & AOTF10N60 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.By providing low RDS(on), Ciss and Crss along with guaranteed aval

文件：264.79 Kbytes 页数：6 Pages

AOSMD

万国半导体

650V,10A N-Channel MOSFET

General Description The AOT10N65 & AOTF10N65 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications. By providing low RDS(on), Ciss and Crss along with guaranteed avalanche capabili

文件：214.47 Kbytes 页数：6 Pages

AOSMD

万国半导体

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 10A@ TC=25℃ ·Drain Source Voltage : VDSS= 600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.7Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-D

文件：297.87 Kbytes 页数：2 Pages

ISC

无锡固电