isc P-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= -45A@ TC=25℃ ·Drain Source Voltage : VDSS= -40V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 17mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-

文件：297.73 Kbytes 页数：2 Pages

ISC

无锡固电

P-Channel 4 0 V (D-S) MOSFET

文件：1.63392 Mbytes 页数：7 Pages

VBSEMI

微碧半导体

60V N-Channel MOSFET

General Description The AOD4130/AOI4130 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is ideal for boost converters and synchronous rectifiers for consumer, telecom, industrial power supplies and LED backlighting. Pro

文件：310.2 Kbytes 页数：6 Pages

AOSMD

万国半导体

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 100A@ TC=25℃ ·Drain Source Voltage : VDSS= 30V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 35mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-D

文件：331.07 Kbytes 页数：2 Pages

ISC

无锡固电

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 53A@ TC=25℃ ·Drain Source Voltage : VDSS= 30V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 70mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC

文件：331.26 Kbytes 页数：2 Pages

ISC

无锡固电

丝印：IPAK；Package：TO-251；Isc N-Channel MOSFET Transistor

文件：315.86 Kbytes 页数：2 Pages

ISC

无锡固电

N-Channel 60 V (D-S) MOSFET

文件：960.08 Kbytes 页数：7 Pages

VBSEMI

微碧半导体

N-Channel 30-V (D-S) MOSFET

文件：994.11 Kbytes 页数：7 Pages

VBSEMI

微碧半导体

N-Channel 30-V (D-S) MOSFET

文件：959.9 Kbytes 页数：8 Pages

VBSEMI

微碧半导体

P-Channel 40 V (D-S) MOSFET

文件：976.68 Kbytes 页数：7 Pages

VBSEMI

微碧半导体