AOD607

Complementary Enhancement Mode Field Effect Transistor

GeneralDescription TheAOD607usesadvancedtrenchtechnologyMOSFETstoprovideexcellentRDS(ON)andlowgatecharge.ThecomplementaryMOSFETsmaybeusedinH-bridge,Invertersandotherapplications.StandardproductAOD607isPbfree(meetsROHS&Sony259specifications).AOD607Lisa

AOD607

MOSFET：Complementary;

AOS pioneered the fab-lite model in the Trench Power MOSFET field, developing leading-edge products that are exclusively manufactured in state-of-the-art 8-inch fabs. Advanced proprietary silicon and packaging processes are designed in AOS’s U.S. headquarters and are then produced with its very efficient manufacturing model. Our product portfolio covers 6V to 1000V MOSFETs and 600V, 650V, 1200V, and 1350V IGBTs.

AOD607

MOSFET;

MTW

AOD607

场效应管;

AOD607

Complementary Enhancement Mode Field Effect Transistor

AOD607A

30V Complementary MOSFET

GeneralDescription •TrenchPowerMOSFETtechnology •LowRDS(ON) •LowGateCharge •ExcellentThermalPerformance •RoHSandHalogen-FreeCompliant Applications •Pch+NchComplementaryMOSFETforDC-FAN ProductSummary Q1Q2 VDS

AOD607L

Complementary Enhancement Mode Field Effect Transistor

GeneralDescription TheAOD607usesadvancedtrenchtechnologyMOSFETstoprovideexcellentRDS(ON)andlowgatecharge.ThecomplementaryMOSFETsmaybeusedinH-bridge,Invertersandotherapplications.StandardproductAOD607isPbfree(meetsROHS&Sony259specifications).AOD607Lisa

AOD607_08

Complementary Enhancement Mode Field Effect Transistor