P-Channel MOSFET

■ Features ● VDS (V) =-20V ● ID =-3.3A (VGS =-10V) ● RDS(ON)

文件：2.02614 Mbytes 页数：4 Pages

KEXIN

科信电子

P-Channel Enhancement Mode Field Effect Transistor

General Description The AO6415 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. It is ESD protected. Standard Product AO6415 is Pb-free (meets ROH

文件：112.15 Kbytes 页数：4 Pages

AOSMD

万国半导体

Silicon Monolithic Integrated Circuit

文件：819.14 Kbytes 页数：16 Pages

ROHM

罗姆

FIXED-POINT DIGITAL SIGNAL PROCESSORS

文件：1.92516 Mbytes 页数：134 Pages

TI

德州仪器